| PART |
Description |
Maker |
| AD5313R |
Dual, 10-Bit <em><span style="text-transform: lowercase">nano</span></em>DAC? with 2 <span style="text-transform: lowercase">ppm</span>/°C Reference, SPI Interface
|
Analog Devices
|
| ADP2109 |
Compact 600 <span style="text-transform: lowercase">m</span>A, 3 MH<span style="text-transform: lowercase">z</span>, Step-Down Converter with Output Discharge
|
Analog Devices
|
| M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M |
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位（处理器x16插槽，引导块V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| ADXL377 |
3-Axis High <span style="text-transform: lowercase"><em>g</em> </span> Analog MEMS Accelerometer
|
Analog Devices
|
| ADUM7641 ADUM7642 ADUM7643 ADUM7640 |
1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (5/1 Channel Directionality)
1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (4/2 Channel Directionality)
1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (3/3 Channel Directionality)
1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (6/0 Channel Directionality)
|
Analog Devices
|
| NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET
HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
| AD5066 |
Fully Accurate, Quad, 16-Bit, UnBuffered VOUT, 2.7 V to 5.5 V <i><span style="text-transform: lowercase;">nano</span></i>DAC<sup>®</sup> with SPI Interface
|
Analog Devices
|
| CM531613 CM531213 |
Dual SCR POW-R-BLOK⑩ Modules 200 Amperes/800 Volts
Dual SCR POW-R-BLOK Modules 200 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FFA60UP20DN FFA60UP20DNTU |
60 A, 200 V, Ultrafast Dual Diode
|
Fairchild Semiconductor
|
| CM200DY-28H |
Dual IGBTMOD 200 Amperes/1400 Volts
Dual IGBTMOD 200 Amperes/1400 Volts
|
Powerex Power Semiconductors
|
| CM200DY-12H |
Dual IGBTMOD 200 Amperes/600 Volts
Dual IGBTMOD 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| HYS64D32020HDL-5-C |
200-Pin Small Outline Dual-In-Line Memory Modules
|
Qimonda AG
|
